RF GaN Semiconductor Device Market Trends Upcoming Trends, Growth Drivers and Challenges, Forecast to 2025 (SARS-CoV-2, Covid-19 Analysis)
RF GaN Semiconductor Device Market
A new market study, titled “RF GaN Semiconductor Device Market” has been featured on Market Research Future.
According to Market Research Future, the global RF GaN semiconductor device market has been segmented based on material, application, end user, and region.
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The demand for RF amplifiers with a high rate of data transmission, higher frequency, and power has led to the development of GaN RF device technology. Factors contributing to the growth of the global RF GaN market are increasing adoption of RF GaN power devices for energy & power applications and rise in demand for IT & telecommunication equipment that use RF GaN power devices
In March 2018, Cree, Inc. announced the acquisition of Infineon Technologies’ AG radio frequency (rf) power business for approximately € 345 million. The transaction would expand the Cree Wolfspeed business unit’s wireless market and also strengthen Wolfspeed’s leadership in RF GaN-on-SiC technology, as well as provides access to additional markets, customers, and packaging expertise.
The global RF GaN semiconductor device market has been segmented based on sensor type, application, and region.
Based on material type, the market has been segmented into GaN-On-SiC, GaN-On-Silicon, and GaN-On-Diamond. The GaN-on-SiC segment holds the largest market share; it is expected to register the highest CAGR during the forecast period due to various benefits offered by it including high thermal conductivity, performance, reliability, and cut-off frequency which increases its adoption across different industry verticals.
Based on applications the market has been segmented into wireless infrastructure, power storage, satellite communication, PV inverter, others. The wireless segment led the market in 2018 due to the increasing requirement of devices with low power consumption and increasing overall efficiency in performance.
Based on end user, the market has been segmented into aerospace & defense, IT & telecom, consumer electronics, automotive, and others. The aerospace & defense segment is the most significant contributor to the market due to increasing investments by the military and defense industries. RF GaN power devices are used in military and defense industry due to its reduced size and weight. Additionally, its ability to enhance the overall efficiency of the systems and reduce power consumption are some of the factors contributing to the growth of the market
Based on application, the global RF GaN semiconductor device market has been segmented into manufacturing, oil & gas, chemicals, pharmaceuticals, energy & power, automotive, food & beverages, aerospace and defense, and others. The manufacturing industry held the largest market share in the application segment in 2018 and is expected to register a significant CAGR during the forecast period. The increasing automation in factories has increased the usage of various sensors to gather accurate information associated with the production and other facilities within the factory premise.
Key Players
The prominent players in the RF GaN semiconductor device market are Sumitomo Electric Industries, Ltd. (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Mitsubishi Electric Corporation (Japan), Infineon Technologies AG (Germany), Renesas Electronics Corporation (Japan), Panasonic Corporation (Japan), Microchip Technology (US), Aethercomm Inc.(US), Cree, Inc. (US), NXP Semiconductor (Netherlands), Analog Devices Inc.(US), ROHM Semiconductors (Japan), Qorvo Inc. (US)
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